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MMBT489LT1 High Current Surface Mount NPN Silicon Switching Transistor for Load Management in Portable Applications
Features
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* Pb-Free Package is Available
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max 30 50 5.0 1.0 2.0 Unit Vdc Vdc Vdc A A
30 VOLTS, 2.0 AMPERES NPN TRANSISTOR
COLLECTOR 3 1 BASE 2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation (Note 1) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Total Device Dissipation (Single Pulse < 10 s) Junction and Storage Temperature Range Symbol PD 310 2.5 RqJA PD 710 5.7 RqJA PDsingle TJ, Tstg 176 575 -55 to +150 mW mW/C C/W 403 mW mW/C C/W Max Unit 1 2
3 SOT-23 (TO-236) CASE 318 STYLE 6
MARKING DIAGRAM
N3 M G G 1
mW C N3 = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 X 1.0 inch Pad
ORDERING INFORMATION
Device MMBT489LT1 MMBT489LT1G Package SOT-23 SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
1
January, 2006 - Rev. 4
Publication Order Number: MMBT489LT1/D
MMBT489LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector- Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = 30 Vdc) Emitter Cutoff Current (VEB = 4.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = 50 mA, VCE = 5.0 V) (IC = 0.5 A, VCE = 5.0 V) (IC = 1.0 A, VCE = 5.0 V) Collector -Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 100 mA) (IC = 0.5 A, IB = 50 mA) (IC = 0.1 A, IB = 1.0 mA) Base -Emitter Saturation Voltage (Note 3) (IC = 1.0 A, IB = 0.1 A) Base -Emitter Turn-on Voltage (Note 3) (IC = 1.0 mA, VCE = 2.0 V) Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz Output Capacitance (f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 300 300 200 VCE(sat) - - - VBE(sat) - VBE(on) - fT 100 Cobo - 15 - pF 1.1 MHz 1.1 V 0.200 0.125 0.075 V - 900 - V V(BR)CEO 30 V(BR)CBO 50 V(BR)EBO 5.0 ICBO - ICES - IEBO - 0.1 0.1 mAdc 0.1 mAdc - mAdc - Vdc - Vdc Vdc Symbol Min Max Unit
1.0 0.9 0.8 0.7 VCE (V) 0.6 0.5 0.4 0.3 0.2 0.1 0 IC = 500 mA IC = 100 mA 0.001 0.01 Ib (A) 0.1 0.2 IC = 1 A VCE (V) IC = 2 A
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 Ic (A) 0.1 1 2 Ic/Ib = 100 Ic/Ib = 10
Figure 1. VCE versus Ib
Figure 2. VCE versus Ic
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MMBT489LT1
800 700 600 VBE(on) (V) 500 hFE 400 300 200 100 0 0.001 0.01 Ic (A) 0.1 1 2 0.2 0 -55C +25C 0.8 0.6 0.4 +125C -55C +25C VCE = 5 V +125C 1.0 1.2 VCE = 5 V
0.001
0.01 Ic (A)
0.1
1
2
Figure 3. hFE versus Ic
Figure 4. VBE(on) versus Ic
1.2 1.0 Ic/Ib = 10 0.8 VBE (V) Ic/Ib = 100 0.6 0.4 0.2 0 IC COLLECTOR CURRENT (A)
10
1 1 ms 10 ms 100 ms 1s SINGLE PULSE Tamb = 25C dc 10 VCE (V) 100
0.1
0.001
0.01 Ic (A)
0.1
1
2
0.01
0.1
1
Figure 5. VBE(sat) versus Ic
0.5 1.0E+00 0.05 0.02 1.0E-01 Rthja , (t) D = 0.01 0.2 0.1
Figure 6. Safe Operating Area
1.0E-02 r(t) 1.0E-03 1E-05 0.0001 0.001 0.01 0.1 t, TIME (sec) 1.0 10 100 1000
Figure 7. Normalized Thermal Response
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MMBT489LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AN
D
3 SEE VIEW C
E
1 2
HE c b e q 0.25
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094
A L A1 L1 VIEW C
DIM A A1 b c D E e L L1 HE
MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10
MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083
MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
SOLDERING FOOTPRINT*
0.95 0.037 0.95 0.037
2.0 0.079 0.9 0.035
SCALE 10:1
0.8 0.031
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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MMBT489LT1/D

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